Chapter 7 . High - Frequency InAIAs / InGaAs Metal - Insulator - Doped Semiconductor Field - Effect Transistors ( MIDFETs ) for Telecommunications
نویسنده
چکیده
MetalInsulatorDoped semiconductor FieldEffect Transistors (MIDFETs) in which the InGaAs channel is heavily doped but the InAIAs insulator is undoped were pioneered by del Alamo and Mizutani at NTT Laboratories.1 These devices have been found to display a performance comparable to InAIAs/InGaAs ModulationDoped FETs (MODFETs) of similar gate length. They additionally offer unique benefits not found in other device structures: reduced gm and fT collapse, higher breakdown voltage, and enhanced freedom for optimization of gate insulator parameters.
منابع مشابه
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تاریخ انتشار 2009